Power Electronics MCQ #15
1) BJT has _____ operating region.
a) 1
b) 2
c) 3
d) 4
2) The BJT is supposed to work as an amplifier, the circuit is so designed to bias it in _______ of operation.
a) Active region
b) Cut-off region
c) Saturation region
d) None of the above
3) BJT will work in cutoff region when it is ______ and in saturation region when it is ______.
a) OFF, OFF
b) ON, OFF
c) OFF, ON
d) ON, ON
4) When the switch is _______, it has zero voltage drop across it and carries full current through it, and when it is in _______ condition.
a) ON, OFF
b) ON, ON
c) OFF, OFF
d) OFF, ON
ANSWER: | 1-c | 2-a | 3-c | 4-a |
5) When positive terminal of a voltage source is connected to the n-type region and the negative terminal of the source is connected to the p-type region then the pn junction is said to be in_______ condition.
a) Forward biased
b) Reverse biased
c) Both forward and reverse biased
d) Cannot predict
6) When there is no voltage applied across the p n junction, the potential developed across the junction is _______ volts at 25 C for germanium pn junction.
a) 0.5
b) 0.7
c) 0.8
d) 0.3
7) When there is no voltage applied across the p n junction, the potential developed across the junction is _______ volts at 25 C for silicon pn junction.
a) 0.5
b) 0.7
c) 0.8
d) 0.3
a) 1
b) 2
c) 3
d) 4
2) The BJT is supposed to work as an amplifier, the circuit is so designed to bias it in _______ of operation.
a) Active region
b) Cut-off region
c) Saturation region
d) None of the above
3) BJT will work in cutoff region when it is ______ and in saturation region when it is ______.
a) OFF, OFF
b) ON, OFF
c) OFF, ON
d) ON, ON
4) When the switch is _______, it has zero voltage drop across it and carries full current through it, and when it is in _______ condition.
a) ON, OFF
b) ON, ON
c) OFF, OFF
d) OFF, ON
ANSWER: | 1-c | 2-a | 3-c | 4-a |
5) When positive terminal of a voltage source is connected to the n-type region and the negative terminal of the source is connected to the p-type region then the pn junction is said to be in_______ condition.
a) Forward biased
b) Reverse biased
c) Both forward and reverse biased
d) Cannot predict
6) When there is no voltage applied across the p n junction, the potential developed across the junction is _______ volts at 25 C for germanium pn junction.
a) 0.5
b) 0.7
c) 0.8
d) 0.3
7) When there is no voltage applied across the p n junction, the potential developed across the junction is _______ volts at 25 C for silicon pn junction.
a) 0.5
b) 0.7
c) 0.8
d) 0.3
8) Saturation current in PN junction is ____ A.
a) 10-9 to 10-18 A
b) 10-19 to 10-28 A
c) 10-1 to 10-8 A
d) 10-1 to 10-2 A
ANSWER- | 5-b | 6-d | 7-b | 8-a |
9) The forward biased p-n junction resistance is rd ohm it is called _______.
a) AC resistance
b) Dynamic resistance
c) DC resistance
d) (a) and (b) both
10) The depletion layer ______ the transition capacitance of PN junction value goes down.
a) decrease
b) increase
c) both
11) ________ is the time taken by the electrons to move from n-type region to p-type region and p-type region to n-type region.
a) Storage Time
b) Transition Time
c) Reverse Recovery Time
d) Fall time
12) ________ is sum of the storage time and transition time.
a) Storage Time
b) Transition Time
c) Reverse Recovery Time
d) Fall time
ANSWER: | 9-d | 10-a | 11-a | 12-c |
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