Power Electronics MCQ #14
1) DIAC is _____ terminal device.
(a) 1
(b) 2
(c) 3
(d) 4
2) Which of the following is bi-directional device?
(a) SCR
(b) Diode
(c) DIAC
(d) All of
the above
3) Which of the following is unidirectional device?
(a) SCR
(b) TRIAC
(c) DIAC
(d) None
of the above
4) SCR can be turned on by ______
(a) Raising
temperature
(b) Focusing
light
(c) Applying
high voltage
(d) All of
the above
ANSWER: | 1-b | 2-c | 3-a | 4-d |
5) In construction of power transistor, the emitter layer
is ______, the base layer is _______ and the drift region is ______.
(a) Heavily
doped - Lightly doped - Moderately doped
(b) Heavily
doped - Moderately doped - Lightly doped
(c) Lightly
doped - Moderately doped - Heavily doped
(d) Moderately
doped - Heavily doped - Lightly doped
6) In active region of operation of power transistor, the
transistor works as _______
(a) Amplifier
(b) Open
circuit
(c) Short
circuit
(d) (b) and
(c) both
7) In construction of power MOSFET, ____ layer is used to
separate GATE terminal and P layer.
(a) SiO2
(b) N+
layer
(c) N-
layer
(d) P+
layer
8) What is the full-form of SITH? (SITH is a power electronic
switch)
(a) Static
induction thyristor
(b) Silicon
induction transistor
(c) Static
induction transistor
(d) State
induction thyristor
ANSWER: | 5-b | 6-a | 7-a | 8-a |
9) _____ is used to trigger the TRIAC.
(a) SCR
(b) UJT
(c) DIAC
(d) Both (b) and (c)
10) “On state voltage drop across IGBT is less than the
MOSFET.” This statement is TRUE or FALSE.
(a) TRUE
(b) FALSE
11) Once _____ is turned on, the gate will not have control
on the operation.
(a) Diode
(b) IGBT
(c) MOSFET
(d) SCR
12)
This is a symbol of which device?
(a) SCR
(b) DIAC
(c) TRIAC
(d) BJT
ANSWER: | 9-d | 10-a | 11-d | 12-b |
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